Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Article - 2015

Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin, Martin Hÿtch, Julien Barjon, Christian Tanguy, Thomas Rivera, Sundaram Suresh, Abdallah Ougazzaden

Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin, Martin Hÿtch, Julien Barjon, Christian Tanguy, Thomas Rivera, Sundaram Suresh, Abdallah Ougazzaden, « Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys  », Journal of Applied Physics, 2015, p. 55705. ISSN 0021-8979

Abstract

Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous.

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