Self-aligned and stray-field-free electrodes for spintronics : An application to a spin field effect transistor Article - Janvier 2007

Pascal Gallo, Alexandre Arnoult, Thierry Camps, E. Havard, Chantal Fontaine, L. Lombez, Thierry Amand, X. Marie, A. Bournel

Pascal Gallo, Alexandre Arnoult, Thierry Camps, E. Havard, Chantal Fontaine, L. Lombez, Thierry Amand, X. Marie, A. Bournel, « Self-aligned and stray-field-free electrodes for spintronics : An application to a spin field effect transistor  », Journal of Applied Physics, janvier 2007, p. 024322. ISSN 0021-8979

Abstract

We present a ringlike design for spin field effect transistor electrodes. This configuration solves the local Hall effect drawback as these electrodes do not generate any stray magnetic fields. The shape and size of the electrodes are adjusted in order to match the physical constraints. The gate configuration and channel length are discussed for the [110] growth direction ; the GaInAs channel length for the spins to fully switch is calculated to be of the order of 0.15μm for a gate electric field of 150–300kV∕cm

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