Spin-filtering effect in GaAsN : electron-nuclear spin dynamics of Ga3+ centers Article - Septembre 2018

V. Ibarra-Sierra, J. Sandoval-Santana, Sawsen Azaizia, Hélène Carrère, L. Bakaleinikov, V. Kalevich, L. Ivchenko, Xavier Marie, Thierry Amand, Andrea Balocchi, A. Kunold

V. Ibarra-Sierra, J. Sandoval-Santana, Sawsen Azaizia, Hélène Carrère, L. Bakaleinikov, V. Kalevich, L. Ivchenko, Xavier Marie, Thierry Amand, Andrea Balocchi, A. Kunold, « Spin-filtering effect in GaAsN : electron-nuclear spin dynamics of Ga3+ centers  », Journal of Materials Science : Materials in Electronics, septembre 2018, pp. 15307-15314. ISSN 0957-4522

Abstract

The impact of Ga3+ centers in the spin-filtering effect observed in GaAsN samples is investigated through a model based on the master equation approach. Our results, compared with experimental data, show that, Ga3+ are essential to understanding the behavior of the photoluminescence intensity and degree of circular polarization as functions of a Faraday configuration magnetic field. The model presented here takes into account the interplay of Ga2+ and Ga3+ centers, Zeeman and hyperfine interaction. The various processes that drive the spin-filtering effect, as the spin selective capture of conduction band electrons into Ga centers are also considered here.

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